VISHAY SIZF5302DT-T1-RE3

VISHAY · FETs & Power MOSFETs · MPN SIZF5302DT-T1-RE3

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Specifications

ConfigurationHalf-Bridge
Current - Continuous Drain(Id)100A
RDS(on)5.3mΩ@4.5V
Pd - Power Dissipation48.1W
Gate Threshold Voltage (Vgs(th))2V
Drain to Source Voltage30V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)30pF
Number2 N-Channel
Input Capacitance(Ciss)1.03nF
Gate Charge(Qg)22.2nC@10V
Operating Temperature-55℃~+150℃

Technical details

N-Channel Array 30V 100A 48.1W PowerPAIR3x3FS

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