VISHAY · FETs & Power MOSFETs · MPN SIZF5302DT-T1-RE3
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| Configuration | Half-Bridge |
|---|---|
| Current - Continuous Drain(Id) | 100A |
| RDS(on) | 5.3mΩ@4.5V |
| Pd - Power Dissipation | 48.1W |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Drain to Source Voltage | 30V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1.03nF |
| Gate Charge(Qg) | 22.2nC@10V |
| Operating Temperature | -55℃~+150℃ |
N-Channel Array 30V 100A 48.1W PowerPAIR3x3FS