VISHAY · FETs & Power MOSFETs · MPN SIZF4800LDT-T1-GE3
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| Operating Temperature | -55℃~+150℃ |
|---|---|
| Output Capacitance(Coss) | 110pF |
| Configuration | - |
| Current - Continuous Drain(Id) | - |
| RDS(on) | 16mΩ@10V |
| Pd - Power Dissipation | 56.8W |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Drain to Source Voltage | 80V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 950pF |
16mΩ@10V 56.8W 1V 2 N-Channel FET, MOSFET Arrays RoHS