VISHAY · FETs & Power MOSFETs · MPN SIZF360DT-T1-GE3
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| Current - Continuous Drain(Id) | 143A |
|---|---|
| Pd - Power Dissipation | 12.8W |
| RDS(on) | 7.5mΩ@4.5V |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Drain to Source Voltage | 30V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 170pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 3.15nF |
| Gate Charge(Qg) | 19.4nC@10V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 1.55nF |
143A 12.8W 7.5mΩ@4.5V 2.2V 2 N-Channel FET, MOSFET Arrays RoHS