VISHAY SIZF300DT-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIZF300DT-T1-GE3

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Specifications

Current - Continuous Drain(Id)141A
Pd - Power Dissipation74W
RDS(on)7mΩ@4.5V
Gate Threshold Voltage (Vgs(th))2.2V
Drain to Source Voltage30V
TypeN-Channel
Number2 N-Channel
Input Capacitance(Ciss)1.1nF;3.15nF
Gate Charge(Qg)10.5nC@10V
Operating Temperature-55℃~+150℃

Technical details

141A 74W 7mΩ@4.5V 2.2V 2 N-Channel FET, MOSFET Arrays RoHS

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