VISHAY · FETs & Power MOSFETs · MPN SIZ998DT-T1-GE3
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| Operating Temperature | -55℃~+150℃ |
|---|---|
| Output Capacitance(Coss) | 325pF;902pF |
| Current - Continuous Drain(Id) | 60A |
| RDS(on) | 10mΩ@4.5V |
| Pd - Power Dissipation | 32.9W |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Drain to Source Voltage | 30V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 21pF;55pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 930pF;2.62nF |
| Gate Charge(Qg) | 12nC;29.5nC |
N-Channel Array 30V 60A 32.9W PowerPAlR6x5