VISHAY · FETs & Power MOSFETs · MPN SIZ998BDT-T1-GE3
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| Current - Continuous Drain(Id) | 94.6A |
|---|---|
| Pd - Power Dissipation | 21.1W |
| RDS(on) | 7.12mΩ@4.5V |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Drain to Source Voltage | 30V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 2.13nF |
| Gate Charge(Qg) | 31.1nC@10V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 1.05nF |
N-Channel Array 30V 94.6A 21.1W Surface Mount PowerPAIR-8(6x5)