VISHAY · FETs & Power MOSFETs · MPN SIZ988DT-T1-GE3
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| Current - Continuous Drain(Id) | 60A |
|---|---|
| RDS(on) | 4.1mΩ@10V |
| Pd - Power Dissipation | 4.8W |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Drain to Source Voltage | 30V |
| Reverse Transfer Capacitance (Crss@Vds) | 65pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 2.425nF |
| Gate Charge(Qg) | 15.4nC@10V |
| Operating Temperature | -55℃~+150℃ |
N-Channel Array 30V 60A 4.8W Surface Mount PowerPAIR-8(6x5)