VISHAY SIZ980DT-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIZ980DT-T1-GE3

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Specifications

Current - Continuous Drain(Id)60A
Pd - Power Dissipation66W
RDS(on)10mΩ@4.5V
Gate Threshold Voltage (Vgs(th))2.2V
Drain to Source Voltage30V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)21pF
Number2 N-Channel
Input Capacitance(Ciss)930pF
Gate Charge(Qg)5.4nC@10V
Operating Temperature-55℃~+150℃

Technical details

N-Channel Array 30V 60A 66W Surface Mount PowerWDFN-8

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