VISHAY SIZ926DT-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIZ926DT-T1-GE3

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Specifications

Current - Continuous Drain(Id)60A
Pd - Power Dissipation40W
RDS(on)7.9mΩ@4.5V
Gate Threshold Voltage (Vgs(th))2.4V
Drain to Source Voltage25V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)100pF
Number2 N-Channel
Input Capacitance(Ciss)925pF
Gate Charge(Qg)19nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)800pF

Technical details

N-Channel Array 25V 60A 40W Surface Mount PowerPAIR-8(6x5)

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