VISHAY · FETs & Power MOSFETs · MPN SiZ918DT-T1-GE3
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| Current - Continuous Drain(Id) | 14.3A |
|---|---|
| RDS(on) | 14.5mΩ@4.5V |
| Pd - Power Dissipation | 100W |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Drain to Source Voltage | 30V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 76pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 790pF |
| Gate Charge(Qg) | 105nC@10V |
| Operating Temperature | -55℃~+150℃ |
N-Channel Array 30V 14.3A 100W Surface Mount DFN-8