VISHAY · FETs & Power MOSFETs · MPN SIZ902DT-T1-GE3
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| Configuration | Half-Bridge |
|---|---|
| Current - Continuous Drain(Id) | 16A |
| Pd - Power Dissipation | 66W |
| RDS(on) | 14.5mΩ@4.5V |
| Gate Threshold Voltage (Vgs(th)) | - |
| Drain to Source Voltage | 30V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 215pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 2.6nF |
| Gate Charge(Qg) | 65nC@10V |
| Operating Temperature | -55℃~+150℃ |
16A 66W 14.5mΩ@4.5V 2 N-Channel FET, MOSFET Arrays RoHS