VISHAY SIZ720DT-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIZ720DT-T1-GE3

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Specifications

ConfigurationHalf-Bridge
Gate Charge(Qg)99nC@10V
Drain to Source Voltage20V
Output Capacitance(Coss)800pF
Current - Continuous Drain(Id)16A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation48W
Reverse Transfer Capacitance (Crss@Vds)350pF
RDS(on)11.5mΩ@4.5V
Number2 N-Channel
Input Capacitance(Ciss)2.35nF

Technical details

20V 16A 2V 48W 11.5mΩ@4.5V 2 N-Channel N-Channel Single FETs, MOSFETs RoHS

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