VISHAY · FETs & Power MOSFETs · MPN SIZ720DT-T1-GE3
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| Configuration | Half-Bridge |
|---|---|
| Gate Charge(Qg) | 99nC@10V |
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 800pF |
| Current - Continuous Drain(Id) | 16A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 48W |
| Reverse Transfer Capacitance (Crss@Vds) | 350pF |
| RDS(on) | 11.5mΩ@4.5V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 2.35nF |
20V 16A 2V 48W 11.5mΩ@4.5V 2 N-Channel N-Channel Single FETs, MOSFETs RoHS