VISHAY SIZ342DT-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIZ342DT-T1-GE3

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Specifications

Gate Charge(Qg)4.5nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)236pF
Current - Continuous Drain(Id)15.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.4V
Pd - Power Dissipation3.7W
Reverse Transfer Capacitance (Crss@Vds)20pF
RDS(on)11.5mΩ@10V
Number2 N-Channel
Input Capacitance(Ciss)650pF
TypeN-Channel

Technical details

N-Channel Array 30V 15.6A 3.7W Surface Mount PowerPAIR-8(3x3)

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