VISHAY SIZ340DT-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIZ340DT-T1-GE3

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Specifications

ConfigurationHalf-Bridge
Current - Continuous Drain(Id)40A
RDS(on)13.7mΩ@4.5V
Pd - Power Dissipation31W
Gate Threshold Voltage (Vgs(th))2.4V
Drain to Source Voltage30V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)-
Number2 N-Channel
Input Capacitance(Ciss)760pF
Gate Charge(Qg)35nC@10V
Operating Temperature-55℃~+150℃

Technical details

N-Channel Array 30V 40A 31W Power33-8

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