VISHAY SIZ340BDT-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIZ340BDT-T1-GE3

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Specifications

Current - Continuous Drain(Id)69.3A
Pd - Power Dissipation31W
RDS(on)8.56mΩ@10V
Gate Threshold Voltage (Vgs(th))2.4V
Drain to Source Voltage30V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)33pF
Number2 N-Channel
Input Capacitance(Ciss)1.065nF
Gate Charge(Qg)23.5nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)440pF

Technical details

69.3A 31W 8.56mΩ@10V 2.4V 2 N-Channel Power-33-8(3x3) FET, MOSFET Arrays RoHS

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