VISHAY SIZ328DT-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIZ328DT-T1-GE3

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Specifications

Drain to Source Voltage25V
Gate Charge(Qg)-
Output Capacitance(Coss)-
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation16.2W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)25mΩ@4.5V
Input Capacitance(Ciss)-
TypeN-Channel

Technical details

25V 30A 2.5V 16.2W 25mΩ@4.5V N-Channel Single FETs, MOSFETs RoHS

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