VISHAY · FETs & Power MOSFETs · MPN SIZ322DT-T1-GE3
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| Gate Charge(Qg) | 6.2nC@10V |
|---|---|
| Drain to Source Voltage | 25V |
| Current - Continuous Drain(Id) | 19A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.4V |
| Pd - Power Dissipation | 3.7W |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF |
| RDS(on) | 6.35mΩ@10V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 950pF |
N-Channel Array 25V 19A 3.7W Surface Mount PowerPAIR-8(3x3)