VISHAY SIZ270DT-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIZ270DT-T1-GE3

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Specifications

Current - Continuous Drain(Id)19.5A
RDS(on)39.4mΩ@10V
Pd - Power Dissipation33W
Gate Threshold Voltage (Vgs(th))2.4V
Drain to Source Voltage100V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)8pF
Number2 N-Channel
Input Capacitance(Ciss)860pF
Gate Charge(Qg)27nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)70pF

Technical details

N-Channel Array 100V 19.5A 33W PowerPAIR3x3S

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