VISHAY SIZ260DT-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIZ260DT-T1-GE3

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Specifications

Current - Continuous Drain(Id)24.7A
RDS(on)24.5mΩ@10V
Pd - Power Dissipation4.3W
Gate Threshold Voltage (Vgs(th))1.1V
Drain to Source Voltage80V
Reverse Transfer Capacitance (Crss@Vds)10pF
Number2 N-Channel
Input Capacitance(Ciss)820pF
Gate Charge(Qg)6.2nC@40V
Operating Temperature-55℃~+150℃

Technical details

N-Channel Array 80V 24.7A 4.3W PAIR

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