VISHAY · FETs & Power MOSFETs · MPN SIZ256DT-T1-GE3
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| Current - Continuous Drain(Id) | 31.8A |
|---|---|
| Pd - Power Dissipation | 33W |
| RDS(on) | 20mΩ@3.3V |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Drain to Source Voltage | 70V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1.06nF |
| Gate Charge(Qg) | 27nC@10V |
| Operating Temperature | -55℃~+150℃ |
N-Channel Array 70V 31.8A 33W Surface Mount PowerPAIR-8(3.3x3.3)