VISHAY · FETs & Power MOSFETs · MPN SIZ250DT-T1-GE3
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| Current - Continuous Drain(Id) | 38A |
|---|---|
| Pd - Power Dissipation | 33W |
| RDS(on) | 12.7mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 2.4V |
| Drain to Source Voltage | 60V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 840pF |
| Gate Charge(Qg) | 21nC@10V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 210pF |
N-Channel Array 60V 38A 33W Surface Mount PowerPAIR-8(3.3x3.3)