VISHAY · FETs & Power MOSFETs · MPN SIZ200DT-T1-GE3
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| Current - Continuous Drain(Id) | 61A |
|---|---|
| RDS(on) | 5.8mΩ@10V |
| Pd - Power Dissipation | 33W |
| Gate Threshold Voltage (Vgs(th)) | 2.4V |
| Drain to Source Voltage | 30V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 28pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1.6nF |
| Gate Charge(Qg) | 30nC@10V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 620pF |
61A 5.8mΩ@10V 33W 2.4V 2 N-Channel FET, MOSFET Arrays RoHS