VISHAY · FETs & Power MOSFETs · MPN SIUD412ED-T1-GE3
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| Gate Charge(Qg) | 470pC@4.5V |
|---|---|
| Drain to Source Voltage | 12V |
| Output Capacitance(Coss) | 13pF |
| Current - Continuous Drain(Id) | 500mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 350mV |
| Pd - Power Dissipation | 370mW |
| Reverse Transfer Capacitance (Crss@Vds) | 1pF |
| RDS(on) | 340mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 21pF |
| Type | N-Channel |
N-Channel 12V 0.5A 0.37W Surface Mount PowerPAK0806-3