VISHAY · FETs & Power MOSFETs · MPN SIUD406ED-T1-GE3
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 600pC@4.5V |
| Current - Continuous Drain(Id) | 500mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.1V |
| Pd - Power Dissipation | 1.25W |
| Reverse Transfer Capacitance (Crss@Vds) | 2.5pF |
| RDS(on) | 1.85Ω@1.8V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 17pF |
| Type | N-Channel |
30V 500mA 1.1V 1.25W 1.85Ω@1.8V 1 N-channel N-Channel PowerPAK0806 Single FETs, MOSFETs RoHS