VISHAY SIUD403ED-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIUD403ED-T1-GE3

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Specifications

Configuration-
Gate Charge(Qg)640pC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)8.1pF
Current - Continuous Drain(Id)500mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))900mV
Pd - Power Dissipation1.25W
Reverse Transfer Capacitance (Crss@Vds)7pF
RDS(on)4.4Ω@1.5V
Number1 P-Channel
Input Capacitance(Ciss)31pF

Technical details

P-Channel 20V 0.5A 1.25W Surface Mount PowerPAK(0.8x0.6)

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