VISHAY SIUD402ED-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIUD402ED-T1-GE3

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Specifications

Gate Charge(Qg)750pC@4.5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)350mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))900mV
Pd - Power Dissipation370mW
Reverse Transfer Capacitance (Crss@Vds)1.2pF
RDS(on)870mΩ@2.5V
Number1 N-channel
Input Capacitance(Ciss)16pF

Technical details

N-Channel 20V 0.35A 0.37W Surface Mount PowerPAK0806-3

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