VISHAY · FETs & Power MOSFETs · MPN SIUD401ED-T1-GE3
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | - |
| Current - Continuous Drain(Id) | 500mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 600mV |
| Pd - Power Dissipation | 370mW |
| RDS(on) | 1.573Ω@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 33pF |
30V 500mA 600mV 370mW 1.573Ω@10V 1 P-Channel Single FETs, MOSFETs RoHS