VISHAY · FETs & Power MOSFETs · MPN SISS98DN-T1-GE3
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| Gate Charge(Qg) | 9.3nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Output Capacitance(Coss) | 57pF |
| Current - Continuous Drain(Id) | 14.1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 57W |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF |
| RDS(on) | 110mΩ@7.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 608pF |
| Type | N-Channel |
200V 14.1A 4V 57W 110mΩ@7.5V 1 N-channel N-Channel PowerPAK1212-8 Single FETs, MOSFETs RoHS