VISHAY · FETs & Power MOSFETs · MPN SISS94DN-T1-GE3
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| Gate Charge(Qg) | 21nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Output Capacitance(Coss) | 77pF |
| Current - Continuous Drain(Id) | 19.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 65.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF |
| RDS(on) | 75mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 350pF |
| Type | N-Channel |
N-Channel 200V 19.5A 65.8W Surface Mount PowerPAK1212-8S