VISHAY · FETs & Power MOSFETs · MPN SISS92DN-T1-GE3
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| Drain to Source Voltage | 250V |
|---|---|
| Gate Charge(Qg) | 16nC@10V |
| Output Capacitance(Coss) | 45pF |
| Current - Continuous Drain(Id) | 12.3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 5W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.5pF |
| RDS(on) | 190mΩ@7.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 350pF |
| Type | N-Channel |
250V 12.3A 4V 5W 190mΩ@7.5V 1 N-channel N-Channel PowerPAK1212-8S Single FETs, MOSFETs RoHS