VISHAY · FETs & Power MOSFETs · MPN SISS80DN-T1-GE3
No reviews yet — be the first to review VISHAY SISS80DN-T1-GE3.
| Gate Charge(Qg) | 122nC@10V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 210A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 80W |
| Reverse Transfer Capacitance (Crss@Vds) | 122pF |
| RDS(on) | 3mΩ@2.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.45nF |
| Type | N-Channel |
20V 210A 1.5V 80W 3mΩ@2.5V 1 N-channel N-Channel PowerPAK1212-8S Single FETs, MOSFETs RoHS