VISHAY · FETs & Power MOSFETs · MPN SISS78LDN-T1-GE3
No reviews yet — be the first to review VISHAY SISS78LDN-T1-GE3.
| Gate Charge(Qg) | 23nC@4.5V |
|---|---|
| Drain to Source Voltage | 70V |
| Output Capacitance(Coss) | 260pF |
| Current - Continuous Drain(Id) | 66.7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.3V |
| Pd - Power Dissipation | 57W |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF |
| RDS(on) | 7.8mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.28nF |
| Type | N-Channel |
70V 66.7A 2.3V 57W 7.8mΩ@4.5V 1 N-channel N-Channel PowerPAK1212-8SH Single FETs, MOSFETs RoHS