VISHAY SISS76LDN-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SISS76LDN-T1-GE3

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Specifications

Drain to Source Voltage70V
Gate Charge(Qg)25nC@3.3V
Current - Continuous Drain(Id)67.4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation57W
Reverse Transfer Capacitance (Crss@Vds)33.5pF
RDS(on)6.9mΩ@3.3V
Number1 N-channel
Input Capacitance(Ciss)2.78nF
TypeN-Channel

Technical details

N-Channel 70V 67.4A 57W Surface Mount PowerPAK1212-8SH

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