VISHAY SISS73DN-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SISS73DN-T1-GE3

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Specifications

Drain to Source Voltage150V
Gate Charge(Qg)22nC@10V
Current - Continuous Drain(Id)16.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation65.8W
Reverse Transfer Capacitance (Crss@Vds)14.6pF
RDS(on)125mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)719pF
TypeP-Channel

Technical details

P-Channel 150V 16.2A 65.8W Surface Mount PowerPAK1212-8S

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