VISHAY · FETs & Power MOSFETs · MPN SISS72DN-T1-GE3
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| Drain to Source Voltage | 150V |
|---|---|
| Gate Charge(Qg) | - |
| Current - Continuous Drain(Id) | 7A;25.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 5.1W;65.8W |
| RDS(on) | 42mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 550pF |
150V 4V 42mΩ@10V 1 N-channel Single FETs, MOSFETs RoHS