VISHAY SISS71DN-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SISS71DN-T1-GE3

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Specifications

Gate Charge(Qg)20nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)330pF
Current - Continuous Drain(Id)23A
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation57W
Reverse Transfer Capacitance (Crss@Vds)20pF
RDS(on)47mΩ@-10V;63mΩ@-4.5V
Number1 P-Channel
Input Capacitance(Ciss)1.05nF
TypeP-Channel

Technical details

P-Channel 100V 23A 57W Surface Mount PowerPAK1212-8S

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