VISHAY · FETs & Power MOSFETs · MPN SISS70DN-T1-GE3
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| Gate Charge(Qg) | 12nC@7.5V |
|---|---|
| Drain to Source Voltage | 125V |
| Current - Continuous Drain(Id) | 31A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 5.1W |
| Reverse Transfer Capacitance (Crss@Vds) | 15.3pF |
| RDS(on) | 29.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 535pF |
| Type | N-Channel |
125V 31A 4.5V 5.1W 29.8mΩ@10V 1 N-channel N-Channel PowerPAK1212-8S Single FETs, MOSFETs RoHS