VISHAY · FETs & Power MOSFETs · MPN SISS67DN-T1-GE3
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 111nC@10V |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 65.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 460pF |
| RDS(on) | 5.5mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 4.38nF |
30V 60A 2.5V 65.8W 5.5mΩ@10V 1 P-Channel Single FETs, MOSFETs RoHS