VISHAY · FETs & Power MOSFETs · MPN SISS65DN-T1-GE3
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 138nC@10V |
| Output Capacitance(Coss) | 575pF |
| Current - Continuous Drain(Id) | 94A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.3V |
| Pd - Power Dissipation | 65.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 516pF |
| RDS(on) | 7.5mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 4.93nF |
| Type | P-Channel |
P-Channel 30V 94A 65.8W Surface Mount PowerPAK1212-8S