VISHAY SISS64DN-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SISS64DN-T1-GE3

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)68nC@10V
Current - Continuous Drain(Id)40A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation45W
Reverse Transfer Capacitance (Crss@Vds)81pF
RDS(on)2.1mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.42nF
TypeN-Channel

Technical details

N-Channel 30V 40A 45W Surface Mount PowerPAK1212-8S

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