VISHAY · FETs & Power MOSFETs · MPN SISS63DN-T1-GE3
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| Gate Charge(Qg) | 72.2nC@10V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 127.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 500mV |
| Pd - Power Dissipation | 5W |
| Reverse Transfer Capacitance (Crss@Vds) | 236pF |
| RDS(on) | 2.7mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 7.08nF |
20V 127.5A 500mV 5W 2.7mΩ@10V 1 P-Channel SO-8 Single FETs, MOSFETs RoHS