VISHAY · FETs & Power MOSFETs · MPN SISS61DN-T1-GE3
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| Gate Charge(Qg) | 231nC@8V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 111.9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 900mV |
| Pd - Power Dissipation | 65.8W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 9.8mΩ@1.8V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 8.74nF |
| Type | P-Channel |
20V 111.9A 900mV 65.8W 9.8mΩ@1.8V 1 P-Channel P-Channel PowerPAK1212-8S Single FETs, MOSFETs RoHS