VISHAY · FETs & Power MOSFETs · MPN SISS588DN-T1-GE3
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| Drain to Source Voltage | 80V |
|---|---|
| Gate Charge(Qg) | 28.5nC@10V |
| Current - Continuous Drain(Id) | 16.9A;58.1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 4.8W;56.8W |
| RDS(on) | 8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.38nF |
80V 4V 8mΩ@10V 1 N-channel Single FETs, MOSFETs RoHS