VISHAY · FETs & Power MOSFETs · MPN SISS5808DN-T1-GE3
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| Gate Charge(Qg) | 24nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 66.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 65.7W |
| RDS(on) | 8.3mΩ@7.5V |
| Type | N-Channel |
80V 66.6A 4V 65.7W 8.3mΩ@7.5V N-Channel PowerPAK1212-8S Single FETs, MOSFETs RoHS