VISHAY · FETs & Power MOSFETs · MPN SISS5708DN-T1-GE3
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| Gate Charge(Qg) | 20nC@10V |
|---|---|
| Drain to Source Voltage | 150V |
| Current - Continuous Drain(Id) | 9.3A;33.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 5.2pF |
| RDS(on) | 23mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 975pF |
150V 4V 23mΩ@10V 1 N-channel PowerPAK1212-8S Single FETs, MOSFETs RoHS