VISHAY · FETs & Power MOSFETs · MPN SISS5623DN-T1-GE3
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 33nC@10V |
| Output Capacitance(Coss) | 800pF |
| Current - Continuous Drain(Id) | 36.3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.6V |
| Pd - Power Dissipation | 56.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 36pF |
| RDS(on) | 46mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.575nF |
| Type | P-Channel |
P-Channel 60V 36.3A 56.8W Surface Mount PowerPAK1212-8S