VISHAY · FETs & Power MOSFETs · MPN SISS54DN-T1-GE3
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 32nC@4.5V |
| Current - Continuous Drain(Id) | 51.1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 65.7W |
| Reverse Transfer Capacitance (Crss@Vds) | 81pF |
| RDS(on) | 1.5mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.45nF |
| Type | N-Channel |
N-Channel 30V 51.1A 65.7W Surface Mount PowerPAK1212-8S