VISHAY · FETs & Power MOSFETs · MPN SISS52DN-T1-GE3
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| Gate Charge(Qg) | 65nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 162A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 36W |
| Reverse Transfer Capacitance (Crss@Vds) | 88pF |
| RDS(on) | 1.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.95nF |
| Type | N-Channel |
N-Channel 30V 162A 36W Surface Mount PowerPAK1212-8SH