VISHAY · FETs & Power MOSFETs · MPN SISS5112DN-T1-GE3
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| Gate Charge(Qg) | 16nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 40.7A |
| Output Capacitance(Coss) | 310pF |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 52W |
| RDS(on) | 18.5mΩ@7.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 7.3pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 790pF |
| Type | N-Channel |
100V 40.7A 4V 52W 18.5mΩ@7.5V 1 N-channel N-Channel PowerPAK1212-8S Single FETs, MOSFETs RoHS