VISHAY · FETs & Power MOSFETs · MPN SISS5110DN-T1-GE3
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| Output Capacitance(Coss) | 370pF |
|---|---|
| Pd - Power Dissipation | 56.8W |
| Configuration | - |
| Gate Charge(Qg) | 20nC@10V |
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 46.4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Reverse Transfer Capacitance (Crss@Vds) | 8.2pF |
| RDS(on) | 16mΩ@7.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 920pF |
56.8W 100V 46.4A 4V 16mΩ@7.5V 1 N-channel N-Channel PowerPAK1212-8S Single FETs, MOSFETs RoHS